KTC3200 transistor (npn) feature power dissipation p cm : 0.625 w (tamb=25 ) collector current i cm : 0.1 a collector-base voltage v (br)cbo : 120 v operating and storage junction temperature range t stg : -55 to +150 tj: 150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 120 v collector-emitter breakdown voltage v(br) ceo i c = 1ma, i b =0 120 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 5 v collector cut-off current i cbo v cb = 120v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe v ce =6v, i c = 2ma 200 700 collector-emitter saturation voltage v ce(sat) i c = 10ma, i b = 1 ma 0.3 v base-emitter voltage v be v ce = 6v, i c = 2ma 0.65 0.8 v transition frequency f t v ce = 6 v, i c = 1ma f=30mhz 100 mhz classification of h fe rank gr bl range 200-400 350-700 1 2 3 to-92 1. emitter 2. collector 3. base KTC3200 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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